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Volumn 519, Issue 11, 2011, Pages 3768-3772
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Temperature effects on the optoelectronic properties of AgIn 5S8 thin films
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Author keywords
Band gap; Chalcogenide glasses; I III VI semiconductors; Optical properties; Photoconductivity; Thin films
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Indexed keywords
ABSORPTION COEFFICIENTS;
ABSORPTION EDGES;
ANNEALING TEMPERATURES;
BAND GAPS;
CHALCOGENIDE GLASSES;
ENERGY BANDGAPS;
FUNDAMENTAL ABSORPTION EDGE;
HEAT-TREATMENT EFFECTS;
I-III-VI SEMICONDUCTORS;
LOWER ENERGIES;
OPTOELECTRONIC PROPERTIES;
PHOTON ENERGY RANGE;
POLYCRYSTALLINE;
STRUCTURAL MODIFICATIONS;
TEMPERATURE COEFFICIENT;
TEMPERATURE DEPENDENCE;
TEMPERATURE DEPENDENT;
TEMPERATURE EFFECTS;
TEMPERATURE INCREASE;
TEMPERATURE REGIONS;
TRANSITION ENERGY;
TRAPPING- RECOMBINATION;
ULTRASONICALLY CLEANED GLASS SUBSTRATES;
ABSORPTION;
ANNEALING;
ENERGY GAP;
GLASS;
PHASE CHANGE MEMORY;
PHOTOCONDUCTIVITY;
SUBSTRATES;
THERMAL EVAPORATION;
THIN FILMS;
OPTICAL PROPERTIES;
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EID: 79952736140
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2010.12.153 Document Type: Article |
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Times cited : (9)
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References (18)
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