Dislocation processes during SiC bulk crystal growth

Microelectronic Engineering

Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 142-145

  Ohtani, Noboru ^a   Katsuno, Masakazu ^a   Tsuge, Hiroshi ^a   Fujimoto, Tatsuo ^a   Nakabayashi, Masashi ^a   Yashiro, Hirokatsu ^a   Sawamura, Mitsuru ^a   Aigo, Takashi ^a   Hoshino, Taizo ^a  

^a NIPPON STEEL CORPORATION   (Japan)

Author keywords

Dislocations; Growth from vapor; Polytype; Silicon carbide

Indexed keywords

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; ETCHING; SILICON CARBIDE; X RAY ANALYSIS;

GROWTH FROM VAPOR; POLYTYPE; SCREW DISLOCATIONS;

DISLOCATIONS (CRYSTALS);

EID: 30344479153     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.048     Document Type: Conference Paper

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