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Volumn 8, Issue 3, 2011, Pages 751-754

Gettering of iron in CZ-silicon by polysilicon layer

Author keywords

Gettering; Iron; Polysilicon

Indexed keywords

BULK MICRO DEFECTS; CONTAMINATION SOURCES; CZOCHRALSKI SILICON WAFERS; GETTERING; GETTERING EFFECT; GETTERING EFFICIENCY; HIGH TEMPERATURE; INTERNAL GETTERING; IRON CONTAMINATION; IRON GETTERING; POLYSILICON GETTERING; POLYSILICON LAYERS; SILICON SURFACES; SLOW COOLING;

EID: 79952678835     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000194     Document Type: Article
Times cited : (7)

References (9)
  • 1
    • 0034449737 scopus 로고    scopus 로고
    • High purity silicon VI
    • Phoenix, Arizona, USA, edited by C. L. Claeys, P. Rai-Chaudhury, M. Watanabe, P. Stallhofer, and H. J. Dawson (The Electrochem. Soc., Pennington, NJ
    • M. B. Shabani, Y. Shiina, and Y. Shimanuki, in: High purity silicon VI, Proceedings of 198th ECS Meeting: Phoenix, Arizona, USA, edited by C. L. Claeys, P. Rai-Chaudhury, M. Watanabe, P. Stallhofer, and H. J. Dawson (The Electrochem. Soc., Pennington, NJ, 2000), pp. 305-318.
    • (2000) Proceedings of 198th ECS Meeting , pp. 305-318
    • Shabani, M.B.1    Shiina, Y.2    Shimanuki, Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.