Atomic-scale Ti3SiC2 bilayers embedded in SiC: Formation of point Fermi surface

Applied Physics Letters

Volumn 98, Issue 10, 2011, Pages

  Wang, Zhongchang ^a   Tsukimoto, Susumu ^a   Sun, Rong ^a   Saito, Mitsuhiro ^a   Ikuhara, Yuichi ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE; BI-LAYER; CONDUCTING CHANNELS; CURRENT FLOWS; FIRST-PRINCIPLES CALCULATION; HETEROSTRUCTURES; PHYSICAL BEHAVIORS; SEMICONDUCTOR HETEROSTRUCTURES; TECHNOLOGICAL APPLICATIONS;

CALCULATIONS; FERMI SURFACE; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

HETEROJUNCTIONS;

EID: 79952675440     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3560505     Document Type: Article

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