Control of strain relaxation behavior of Ge1-xSnx layers for tensile strained Ge layers

ECS Transactions

Volumn 33, Issue 6, 2010, Pages 205-210

  Shimura, Y ^a   Takeuchi, S ^a,b   Nakatsuka, O ^a   Zaima, S ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b Covalent Silicon Co ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINITY; GERMANIUM COMPOUNDS; STRAIN RELAXATION; TENSILE STRAIN;

GE LAYERS; MISFIT STRAINS; RELAXATION BEHAVIORS; SN CONTENTS; STRAINED-GE; SURFACE-ROUGHENING;

SI-GE ALLOYS;

EID: 79952633064     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3487550     Document Type: Conference Paper

References (6)

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