Influence of grain size on the properties of AlN doped ZnO thin film

Materials Science in Semiconductor Processing

Volumn 14, Issue 1, 2011, Pages 84-88

  Bhuvana, K P ^a   Elanchezhiyan, J ^b   Gopalakrishnan, N ^b   Balasubramanian, T ^b  

^a CENTRAL INSTITUTE OF PLASTICS ENGINEERING AND TECHNOLOGY   (India)

^b NATIONAL INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Figure of merit; Hall effect measurements; Sputtering; ZnO

Indexed keywords

ALN; CO-DOPED ZNO; DEVICE FABRICATIONS; DOPANT CONCENTRATIONS; DOPED ZNO; FIGURE OF MERIT; GRAIN SIZE; HALL EFFECT MEASUREMENTS; OPTICAL AND ELECTRICAL PROPERTIES; P-TYPE CONDUCTION; POWDER X RAY DIFFRACTION; ZNO; ZNO FILMS;

DIFFRACTION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; GYRATORS; HALL EFFECT; MAGNETIC FIELD EFFECTS; METALLIC FILMS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DOPING; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 79952621922     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2011.01.005     Document Type: Article

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