Heat treatment effects on the structural and electrical properties of thermally deposited AgIn5S8 thin films

Solid State Communications

Volumn 151, Issue 8, 2011, Pages 615-618

  Qasrawi, A F ^a,b   Kayed, T S ^a,c   Ercan, Filiz ^d  

^a ATILIM UNIVERSITY   (Turkey)

^b ARAB AMERICAN UNIVERSITY   (Palestine)

^c IMAM ABDULRAHMAN BIN FAISAL UNIVERSITY   (Saudi Arabia)

^d HACETTEPE UNIVERSITY   (Turkey)

Author keywords

A. Thin films; B. Crystal growth; C. Grain boundaries; D. Electronic transport

Indexed keywords

A. THIN FILMS; ANNEALING TEMPERATURES; B. CRYSTAL GROWTH; C. GRAIN BOUNDARIES; ELECTRICAL RESISTIVITY; ELECTRONIC TRANSPORT; FOUR-ORDER; GRAIN SIZE; HALL COEFFICIENT; HEAT-TREATMENT EFFECTS; IMPURITY LEVEL; ROOM TEMPERATURE; SEMICONDUCTOR TRANSITION; STRUCTURAL AND ELECTRICAL PROPERTIES; TEMPERATURE DEPENDENT; TEMPERATURE RANGE;

ANNEALING; CARRIER CONCENTRATION; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; GALVANOMAGNETIC EFFECTS; GRAIN GROWTH; GRAIN SIZE AND SHAPE; HALL MOBILITY; METAL ANALYSIS; SEMICONDUCTOR GROWTH; THIN FILMS;

GRAIN BOUNDARIES;

EID: 79952536792     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2011.02.001     Document Type: Article

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