Room-temperature below bulk-Si band gap photoluminescence from P and B co-doped and compensated Si nanocrystals with narrow size distributions

Journal of Luminescence

Volumn 131, Issue 5, 2011, Pages 1066-1069

  Fukuda, Masatoshi ^a   Fujii, Minoru ^a   Hayashi, Shinji ^a  

^a KOBE UNIVERSITY   (Japan)

Author keywords

Boron; Co doping; Multi layer; Phosphorus; Silicon nanocrystal; Size distribution

Indexed keywords

BAND GAP ENERGY; CO-DOPED; CO-DOPING; CROSS-SECTIONAL TEM; DONOR AND ACCEPTOR; GLASS SPACERS; LOW ENERGIES; NARROW SIZE DISTRIBUTIONS; PHOTOLUMINESCENCE PROPERTIES; ROOM TEMPERATURE; SI BAND GAP; SI CRYSTALS; SI NANOCRYSTAL; SILICON NANOCRYSTAL;

BORON; ENERGY GAP; NANOCRYSTALS; OPTICAL PROPERTIES; PHOSPHORUS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SIZE DETERMINATION; SIZE DISTRIBUTION;

SILICON;

EID: 79952488004     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2011.01.023     Document Type: Article

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