A new method to measure trap characteristics of silicon solar cells

Chinese Physics Letters

Volumn 28, Issue 2, 2011, Pages

  Ma, Xun ^a,b   Liu, Zu Ming ^b   Qu, Sheng ^c   Wang, Shu Rong ^b   Hao, Rui Ting ^b   Liao, Hua ^b  

^a CHINA AGRICULTURAL UNIVERSITY   (China)

^b YUNNAN NORMAL UNIVERSITY   (China)

^c Eoplly New Energy Technology Co Ltd   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; HOLE CONCENTRATION; SILICON SOLAR CELLS;

CAPTURE CROSS SECTIONS; CELL-BE; CELL/B.E; CELL/BE; CRYSTALLINE SILICON SOLAR CELLS; MONOCHROMATIC ILLUMINATION; OPEN-CIRCUIT VOLTAGES; RATIO OF HOLES; SHOCKLEY-READ-HALL THEORIES; TRAPPING CENTERS;

OPEN CIRCUIT VOLTAGE;

EID: 79952462727     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/28/2/028801     Document Type: Article

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