Ellipsometric characterization of AlN films synthesized by Pulsed-Laser-Deposition

Journal of Physics: Conference Series

Volumn 253, Issue 1, 2010, Pages

  Szekeres, A ^a   Vlaikova, E ^a   Cziraki, A ^b   Petrik, P ^c   Socol, G ^d   Ristoscu, C ^d   Mihailescu, I N ^d  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b EÖTVÖS LORÁND UNIVERSITY   (Hungary)

^c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^d NATIONAL INSTITUTE FOR LASER   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; AMORPHOUS FILMS; AMORPHOUS MATERIALS; DEPOSITION; ELLIPSOMETRY; ENERGY GAP; EXCIMER LASERS; LASER PULSES; MOLECULAR ELECTRONICS; NITROGEN; PULSED LASER DEPOSITION; REFRACTIVE INDEX;

ENERGETIC PARAMETERS; EXCIMER LASER SOURCES; HEXAGONAL PHASE; HIGH-FREQUENCY DIELECTRICS; OPTICAL BAND GAP ENERGY; OPTICAL PARAMETER; SHORT LASER PULSE; SINGLE OSCILLATORS;

PULSED LASERS;

EID: 79952431207     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/253/1/012032     Document Type: Conference Paper

References (16)

1. Liufu D and Kao K C 1998 J. Vac. Sci. Technol. A 16 2360
2. Takikawa H, Kimura K, Miyano R, Sakakibara T, Bendavid A, Martin P J, Matsumuro A and Tsutsumi K 2001 Thin Solid Films 386 276
3. Szekeres A, Bakalova S, Cziraki A, Grigorescu S, Socol G, Axente E, Ristoscu C and Mihailescu I N 2006 Proc. Int. Conf. "New trends in development of nano-structured thin films, hard and superhard coatings" ed R Kakanakov and L Kolaklieva p 41
4. Paisley M and Davis R 1993 J. Cryst. Growth 127 136
5. Kitagawa H, Shibutani Y and Ogata S 1995 Model. Simul. Mater. Sci. Eng. 3 521
6. Bakalova S, Szekeres A, Cziraki A, Lungu C P, Grigorescu S, Socol G, Axente E and Mihailescu I N 2007 Appl. Surf. Sci. 253 (19) 8215
7. Bakalova S, Szekeres A, Cziraki A, Grigorescu S, Socol G, Mihailescu I N 2007 Nanoscience &Nanotechnology vol 7 ed E Balabanova, I Dragieva (Heron Press Sofia) p 119
8. Bakalova S, Szekeres A, Cziraki A, Huhn G Havancsak, K Grigorescu S, Socol G, Axente E, Mihailescu I N and Gavrila R 2009 J. Optoelectron.&Adv. Mater. 10 1479
9. Szekeres A, Bakalova S, Grigorescu S, Cziraki A, Socol G Ristoscu and C Mihailescu I N 2009 Appl.Surf. Sci. 255 5271
10. Bakalova S, Szekeres A, Grigorescu S, Axente E, Socol G and Mihailescu I N 2006 Appl. Phys. A 85 99
11. Narayan J, Wu H and Vispute R D 1996 J.Electronic Mater. 25 143
12. Hadis Morkoc Properties of Nitride Semiconductors, http://www. engineering.vcu.edu/fac/morkoc/learning/mahajan-short.pdf
13. Wemple S H and DiDomenico M 1971 Phys. Rev. B 3 1338
14. Suzuki T, Yaguchi H, Okumira H, Ishida Y and Yoshida S 2000 Jpn J. Appl. Phys. 39 L497
15. Lawniczak-Jablonska K, Suski T, Gorczyca I, Christensen N E, Attenkofer K E, Perera R C C, Gullikson E M, Underwood J H, Ederer D L and Liliental Weber Z 2000 Phys. Rev. B 61 (16) 623
16. Yim W M 1973 J. Appl. Phys. 44 292