SCOPUS 정보 검색 플랫폼

e-Journal of Surface Science and Nanotechnology

Volumn 9, Issue , 2011, Pages 54-57

Chemical state analysis of Si-doped CNT on SiC by hard x-ray photoelectron spectroscopy

(7) Son, Jin Young a MacHida, Masatake a Oji, Hiroshi a Watanabe, Yoshio a,c Maruyama, Takehiro b Norimatsu, Wataru b Kusunoki, Michiko b

a JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE (Japan)

b NAGOYA UNIVERSITY (Japan)

c KEIO UNIVERSITY (Japan)

Author keywords

Carbon nanotube; Hard x ray photoelectron spectroscopy; Silicon; Silicon carbide

Indexed keywords

CARBON NANOTUBES; CHEMICAL BONDS; DEPTH PROFILING; KINETIC ENERGY; KINETICS; PHOTOELECTRONS; PHOTONS; SILICON; SILICON CARBIDE; X RAYS; YARN;

BULK SENSITIVE; CHEMICAL BONDINGS; CHEMICAL STATE ANALYSIS; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; PEAK SHIFT; PHOTOELECTRON SPECTRUM; SPECTRAL COMPONENTS; TAKE-OFF ANGLE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 79952400959 PISSN: None EISSN: 13480391 Source Type: Journal
DOI: 10.1380/ejssnt.2011.54 Document Type: Article

Times cited : (2)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.