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Volumn 234, Issue 1-4, 2004, Pages 246-250
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Electronic structures of ultra-thin silicon carbides deposited on graphite
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Author keywords
[No Author keywords available]
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Indexed keywords
ABSORPTION;
BINDING ENERGY;
ELECTRONIC STRUCTURE;
GRAPHITE;
GROWTH (MATERIALS);
MONOLAYERS;
OPTOELECTRONIC DEVICES;
POLARIZATION;
PYROLYSIS;
SEMICONDUCTOR MATERIALS;
ULTRATHIN FILMS;
X RAY PHOTOELECTRON SPECTROSCOPY;
FLAT-FLYING STRUCTURE;
HIGHLY ORIENTED PYROLYTIC GRAPHITE (HOPG);
POLARIZATION DEPENDENCIES;
X-RAY ABSORPTION NEAR EDGE STRUCTURE (XANES);
SILICON CARBIDE;
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EID: 3343016666
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2004.05.045 Document Type: Conference Paper |
Times cited : (10)
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References (20)
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