Experimental demonstration and analysis of high performance and low 1/f noise Tri-gate MOSFETs by optimizing device structure

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1786-1788

  Cheng, Weitao ^a   Teramoto, Akinobu ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

1 f Noise; Accumulation mode; Multi gate MOSFETs

Indexed keywords

1/F NOISE; ACCUMULATION MODES; ACCUMULATION-MODE; DEVICE STRUCTURES; GATE OXIDE; MOS-FET; MOSFETS; MULTI-GATE MOSFETS; SOI-MOSFETS; TRIGATE;

AMPLITUDE MODULATION; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR);

MOSFET DEVICES;

EID: 67349249423     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.062     Document Type: Article

References (10)

1. Tseng Y.-C., Margaret Huang W., Mendicino M., Monk D.J., Welch P.J., and Woo J.C.S. IEEE Trans. Electron. Dev. 48 (2001) 1428-1437 (July)
2. Sato T., Takeishi Y., Hara H., and Okamoto Y. Phys. Rev. B 4 (1971) 1950-1960 (September)
3. Teramoto A., Hamada T., Yamamoto M., Gaubert P., Akahori H., Nii K., Hirayama M., Arima K., Endo K., Sugawa S., and Ohmi T. IEEE Trans. Electron. Dev. 54 (2007) 1438-1445 (June)
4. Taur Y., Buchanan D.A., Chen W., Frank D.J., Ismail K.E., Lo S., Halasz G.A., Viswanathan R.G., Wann H.C., Wind S.J., and Wong H. Proc. IEEE (1997) 486-504
5. Ahmed K., Ibok E., Bains G., Chi D., Ogle B., Wortman J.J., and Hauser J.R. IEEE Trans. Electron. Dev. 47 (2000) 1349-1354
6. Arora N.D., Rios R., and Huang C. IEEE Trans. Electron. Dev. 42 (1995) 935-943
7. Ohmi T. J. Electrochem. Soc. 143 9 (1996) 2957-2964 (September)
8. Ohmi T., Hirayama M., and Teramoto A. J. Phys. D Appl. Phys. 39 1 (2006) R1-R17 (January)
9. Gaubert P., Teramoto A., Hamada T., Yamamoto M., Kotani K., and Ohmi T. IEEE Trans. Electron. Dev. 53 4 (2006) 851-856 (April)
10. Cheng W., Teramoto A., Hirayama M., Sugawa S., and Ohmi T. Jpn. J. Appl. Phys. 45 (2006) 3110-3116