Barium strontium bismuth niobate layered perovskites: Dielectric, impedance and electrical modulus characteristics

Acta Physica Polonica A

Volumn 119, Issue 3, 2011, Pages 387-394

  Dasari, M P ^a   Sambasiva Rao, K ^b   Murali Krishna, P ^b   Gopala Krishna, G ^a  

^a GITAM UNIVERSITY   (India)

^b ANDHRA UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM; BISMUTH; BISMUTH COMPOUNDS; FERROELECTRIC MATERIALS; GRAIN BOUNDARIES; NIOBIUM COMPOUNDS; PERMITTIVITY; PEROVSKITE; POLYMER BLENDS; RANDOM ACCESS STORAGE; STRONTIUM; STRONTIUM COMPOUNDS;

CONDUCTIVITY RELAXATION; DIELECTRIC PERMITTIVITIES; FREQUENCY DEPENDENCE; HIGH CURIE TEMPERATURE; NON-VOLATILE RANDOM ACCESS MEMORY; RELAXATION BEHAVIORS; RELAXATION MECHANISM; STRONTIUM BISMUTH NIOBATE;

BARIUM COMPOUNDS;

EID: 79952131522     PISSN: 05874246     EISSN: 1898794X     Source Type: Journal    
DOI: 10.12693/APhysPolA.119.387     Document Type: Article

References (37)

1. B. Aurivillius, Arkh. Khemi 1, 499(1950).
2. J. F. Scott, F. M. Ross, C. A. Paz de Araujo, M. C. Scott, M. Huffman, MRS Bulletin 21, 33(1996).
3. I. M. Reancy, M. Roulin, H. S. Shulman, N. Setter, Ferroelectrics 165, 295(1995).
4. Y. Xu, Ferroelectric Materials and Their Applications North-Holland, Amsterdam 1991.
5. Y. Noguchi, M. Miyayama, Appl. Phys. Lett. 78, 1903(2001).
6. K. Kato, C. Zheng, J. M. Finder, S. K. Dey, T. Torri, J. Am. Ceram. Soc. 81, 1869(1998).
7. X. Du, I. W. Chen, J. Am. Ceram. Soc. 41, 3253(1998).
8. S. H. Hwang, H. J. Chang, J. Korean Phys. Soc. 42, 139(2003).
9. B. H. Park, B. S. Kang, S. B. Bu, T. W. Noh, J. Lee, W. Jo, Nature 401, 682(1999).
10. I. W. Kim, C. W. Ahn, J. S. Kim, J. S. Bae, B. C. Choi, J. H. Jeong, J. S. Lee, Appl. Phys. Lett. 80, 4006(2002).
11. P. C. Joshi, S. B. Krupanidhi, A. Mansingh, J. Appl. Phys. 72, 5517(1992).
12. M. Villegas, A. C. Caballero, C. Moure, P. Durn, J. F. Fernadez, J. Eur. Ceram. Soc. 19, 1183(1999).
13. J. F. Scott, Ferroelectric Memories, Springer, Berlin 2000.
14. D. Dimos, W. L. Warren, H. N. Al-Shareef, in: Thin Film Ferroelectric Materials and Devices, Ed. R. Ramesh, Kluwer, Norwell, MA 1997, p. 199.
15. E. C. Subba Rao, J. Am. Ceram. Soc. 45, 166(1962).
16. G. A. Smolenskii, V. A. Isupov, A. I. Agranovskaya, Fiz. Tverd. Tela 3, 895(1961).
17. E. C. Subba Rao, J. Phys. Chem. Solids 23, 665(1962).
18. Lu Zhigao, J. P. Bonnet, J. Ravez, P. Hagenmuller, Solid State Ionics 57, 235(1992).
19. T. A. Nealon, Ferroelectrics 76, 377(1987).
20. A. K. Jonscher, R. M. Hill, C. Pickup, J. Mater. Sci. 20, 4431(1985).
21. B. Roling, A. Happe, K. Funke, M. D. Ingram, Phys. Rev. Lett. 78, 2160(1997).
22. F. E. G. Henn, J. C. Giuntini, J. V. Zanchetta, W. Granier, A. Taha, Solid State Ionics 42, 29(1990).
23. J. C. Giuntini, B. Deroide, P. Belougne, J. V. Zanchetta, Solid State Commun. 62, 739(1987).
24. Y. Bensimon, J. C. Giuntini, P. Belougne, B. Deroire, J. V. Zanchetta, Solid State Commun. 68, 189(1988).
25. W. K. Lee, J. F. Liu, A. S. Nowick, Phys. Rev. Lett. 67, 1559(1991).
26. A. K. Jonscher, Dielectric Relaxation in Solids, Chelsea-Dielectric Press, London 1983.
27. Z. Lu, J. P. Bonnet, J. Ravez, P. Hagenmuller, Eur. J. Solid State Inorg. Chem 27, 363(1991).
28. G. Williams, D. C. Watts, Trans. Fraday Soc. 23, 625(1970).
29. K. L. Nagai, S. W. Martin, Phys. Rev. B 40, 10050(1989).
30. F. S. Howell, R. A. Bose, P. B. Macedo, C. T. Moynihan, J. Phys. Chem. 78, 639(1974).
31. J. M. Reqa, S. Rossignol, B. Tanguy, M. A. Paris, J. M. Rojo, J. Sanz, Solid State Ionics 80, 283(1995).
32. N. Zouari, M. Mnif, H. Khemakhem, T. Mhiri, A. Daoud, Solid State Ionics 110, 269(1998).
33. Lu. Zhigao, J. P. Bonnet, J. Ravez, J. M. Reau, P. Hagenmuller, Phys. Chem. Solids 53, 1(1992).
34. P. B. Macedo, C. T. Moynihan, R. Bose, Phys. Chem. Glasses 13, 171(1972).
35. C. A. Angell, Chem. Rev. 90, 523(1990).
36. J. S. Kim, J. Phys. Soc. Jpn. 70, 3129(2001).
37. R. Gerhardt, J. Phys. Chem. Solids 55, 1491(1994).