Single-crystalline Cu4Bi4S9 nanoribbons: Facile synthesis, growth mechanism, and surface photovoltaic properties

Chemistry of Materials

Volumn 23, Issue 5, 2011, Pages 1299-1305

  Li, Hongxing ^a,b   Zhang, Qinglin ^a   Pan, Anlian ^a   Wang, Yanguo ^a,c   Zou, Bingsuo ^a   Fan, Hong Jin ^b  

^a HUNAN UNIVERSITY   (China)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF PHYSICS   (China)

Author keywords

chalcogenide; Cu4Bi4S9; nanobelts; photovoltaics; solvothermal; surface photovoltage

Indexed keywords

CU-BASED; CU4BI4S9; DODECYLAMINE; ENHANCED SURFACE; FACILE SYNTHESIS; GROWTH MECHANISMS; LAYER-BY-LAYERS; NANORIBBONS; NARROW BAND GAP; OPTICAL INVESTIGATION; ORTHORHOMBIC PHASE; OTHER OPTO-ELECTRONIC DEVICES; PHOTOVOLTAIC MATERIALS; PHOTOVOLTAIC PROPERTY; PHOTOVOLTAICS; POTENTIAL APPLICATIONS; SINGLE-CRYSTALLINE; SOLVOTHERMAL; SOLVOTHERMAL METHOD; STACKING LAYERS; SURFACE PHOTOVOLTAGE; TERNARY CHALCOGENIDES; THIN SLAB; VISIBLE-WAVELENGTH RANGE; WIDTH-TO-THICKNESS RATIO;

CHALCOGENIDES; CRYSTALLINE MATERIALS; NANOBELTS; OPTOELECTRONIC DEVICES; PHOTOVOLTAIC EFFECTS; SLAB MILLS; SURFACE PROPERTIES;

PHASE CHANGE MEMORY;

EID: 79952128119     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm103340v     Document Type: Article

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43. Note that the decrease of the SPV response below the wavelength of 600 nm is due to the decrease of the luminous energy of the halogen-tungsten lamp in this spectrum region (See Figure S4 in the Supporting Information). The dips at ∼820 nm in the SPV response spectra are due to a switch of the filters at this wavelength during the measurement.