Single crystal growth and characterization of copper aluminum indium disulfide chalcopyrites

Journal of Crystal Growth

Volumn 317, Issue 1, 2011, Pages 52-59

  Ho, Ching Hwa ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

A2. Bulk crystal growth; B1. Cu(AlxIn1 x)S2

Indexed keywords

AS-GROWN CRYSTAL; B1. CU(ALXIN1-X)S2; BAND DIAGRAMS; BULK CRYSTAL GROWTH; CHALCOPYRITE CRYSTALS; CHEMICAL VAPOR TRANSPORT; COMPOSITION DEPENDENCE; CONDUCTION BAND EDGE; CRYSTALLINE QUALITY; ELECTRON CONFIGURATION; ELECTRONIC BAND STRUCTURE; EXPERIMENTAL ANALYSIS; FUNDAMENTAL BANDS; INTER-BAND TRANSITION; ISOSTRUCTURAL; NEAR BAND EDGE; SINGLE PHASE; THERMOREFLECTANCE; TRANSITION ENERGY; TRANSPORT AGENT; X RAY MEASUREMENTS; XPS;

ALUMINUM; COPPER COMPOUNDS; CRYSTAL GROWTH; CRYSTALLIZATION; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

SINGLE CRYSTALS;

EID: 79952040522     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.01.008     Document Type: Article

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