Polarized-thermoreflectance study of the bandedge transitions in Cu(Al 0.5in0.5)S2 solar-energy related crystal

Optics Express

Volumn 18, Issue 4, 2010, Pages 3820-3827

  Ho, Ching Hwa ^a,b   Huang, Guan Tzu ^b  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; DENSE WAVELENGTH DIVISION MULTIPLEXING; EXCITONS; POLARIZATION; SOLAR ENERGY;

AS-GROWN; BAND EDGE; BAND EDGE TRANSITION; BAND-EDGE STRUCTURES; CHALCOPYRITE CRYSTALS; CRYSTAL-FIELD SPLITTING; D ELECTRONS; EXCITONIC TRANSITION; NATIVE DEFECT; POLARIZATION DEPENDENCE; POLARIZED SPECTRA; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; THERMOREFLECTANCE; TRANSITION ENERGY;

CRYSTAL STRUCTURE;

ARTICLE; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; POWER SUPPLY; REFRACTOMETRY; SOLAR ENERGY; THEORETICAL MODEL;

COMPUTER SIMULATION; COMPUTER-AIDED DESIGN; ELECTRIC POWER SUPPLIES; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MODELS, THEORETICAL; REFRACTOMETRY; SOLAR ENERGY;

EID: 77149152489     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.003820     Document Type: Article

References (14)

1. 2 films grown under Cu-rich conditions as absorbers for solar cells," Sol. Energy Mater. Sol. Cells 87(1-4), 207-214 (2005).
2. 2 and CuGaSe2," J. Appl. Phys. 83(7), 3678-3689 (1998).
3. 2 to monophasic CuInS2 nanorods," J. Am. Chem. Soc. 131(13), 4962-4966 (2009).
4. K. Yoshino, T. Ikari, S. Shirakata, H. Miyake, and K. Hiramatsu, "Sharp band edge photoluminescence of highpurity CuInS2 single crystals," Appl. Phys. Lett. 78(6), 742-744 (2001).
5. 2 ultraviolet solarcell material," Appl. Phys. Lett. 96(6), 061902 (2010).
6. 2 single crystals using polarized thermoreflectance spectroscopy," Opt. Express 13(1), 8-19 (2005), http://www.opticsexpress.org/abstract.cfm?URI=OPEX- 13-l-8.
7. C. H. Ho, and S. L. Lin, "Optical properties of the interband transitions of layered gallium sulfide," J. Appl. Phys. 100(8), 083508 (2006).
8. D. E. Aspnes, in Handbook on Semiconductors, edited by M. Balkanski, (North Holland, Amsterdam, 1980).
9. 0.5)P/GaAs heterostructure cavity by piezoreflectance spectroscopy," Opt. Express 15(21), 13886-13893 (2007), http://www.opticsinfobase.org/oe/abstract.cfm?uri= oe-15-21-13886.
10. 2," Phys. Rev. B 28(10), 5822-5847 (1983).
11. 2 chalcopyrite semiconductors," Phys. Rev. B 29(4), 1882-1906(1984).
12. T. M. Hsu, J. S. Lee, and H. L. Hwang, "Photoreflectance of sulfur-annealed copper indium disulfide," J. Appl. Phys. 68(1), 283-287 (1990).
13. 2 energy-related crystals studied by temperature-dependent thermoreflectance spectroscopy," J. Electrochem. Soc. 157(2), H219-H226 (2010).
14. 2," J. Appl. Phys. 74(6), 3811-3814 (1993).