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Journal of Crystal Growth

Volumn 312, Issue 19, 2010, Pages 2718-2723

Growth and characterization of near-band-edge transitions in β-In 2S3 single crystals

(1) Ho, Ching Hwa a

a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

Author keywords

A1. Optical absorption; A1. Photoluminescence; A2. Bulk crystal growth; B1. In2S3

Indexed keywords

A1. PHOTOLUMINESCENCE; B1. IN2S3; BAND EDGE; BAND EDGE LUMINESCENCE; BAND EDGE TRANSITION; BAND GAPS; BULK CRYSTAL GROWTH; CHALCOGENIDE COMPOUND; CHEMICAL VAPOR TRANSPORT; DEFECT EMISSION; ENERGY VARIATIONS; EXPERIMENTAL ANALYSIS; LOW TEMPERATURES; NEAR BAND EDGE; OPTICAL ABSORPTION; PL SPECTRA; TEMPERATURE CHANGES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; TEMPERATURE-INSENSITIVE; TETRAGONAL CRYSTALS; THERMOREFLECTANCE; TRANSITION ENERGY; TRANSPORT AGENT;

ABSORPTION; CRYSTAL GROWTH; CRYSTALLIZATION; DEFECTS; ENERGY GAP; LIGHT ABSORPTION; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH;

SINGLE CRYSTALS;

EID: 77956186787 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.06.018 Document Type: Article

Times cited : (54)

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