Ultrahigh on/off -current ratio for resistive memory devices with poly(N-Vinylcarbazole)/poly(3, 4-ethylenedioxythiophene)poly(styrenesulfonate) stacking bilayer

IEEE Electron Device Letters

Volumn 32, Issue 3, 2011, Pages 387-389

  Lai, Pei Ying ^a   Chen, Jen Sue ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Nanoparticle (NP); organic memory; poly(3, 4 ethylenedioxythiophene)poly(styrenesulfonate) (PEDOTPSS); poly(N vinylcarbazole) (PVK); resistive memory

Indexed keywords

ACTIVE LAYER; AU NANOPARTICLE; BI-LAYER; CURRENT RATIOS; MEMORY DEVICE; N-VINYLCARBAZOLE; NON-VOLATILE-MEMORY APPLICATIONS; OFF-CURRENT; ORGANIC MEMORY; PEDOT-PSS; POLY(3 ,4-ETHYLENEDIOXYTHIOPHENE); POLY(N-VINYLCARBAZOLE); POLY(STYRENE SULFONATE); RESISTIVE MEMORY; STACKING CONFIGURATIONS;

CARRIER TRANSPORT; GOLD ALLOYS; NANOPARTICLES;

GOLD;

EID: 79951942579     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2099102     Document Type: Article

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