Influence of electrical field dependent depletion at metal-polymer junctions on resistive switching of poly(N-vinylcarbazole) (PVK)-based memory devices

Organic Electronics

Volumn 10, Issue 8, 2009, Pages 1590-1595

  Lai, Pei Ying ^a   Chen, J S ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Band offsets; Nanoparticle; Poly(N vinylcarbazole) (PVK); Resistance random access memory (RRAM); Schottky barrier junction

Indexed keywords

ALUMINUM COMPOUNDS; C (PROGRAMMING LANGUAGE); GOLD; GOLD COMPOUNDS; GOLD NANOPARTICLES; HOLE CONCENTRATION; NANOPARTICLES; POLYMER FILMS; SCHOTTKY BARRIER DIODES;

BAND OFFSETS; ELECTRICAL BISTABILITY; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; METAL-POLYMER JUNCTIONS; POLY(N-VINYLCARBAZOLE); RESISTANCE RANDOM ACCESS MEMORY; SCHOTTKY BARRIERS;

RANDOM ACCESS STORAGE;

EID: 71849109758     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2009.09.006     Document Type: Article

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