Control of device parameters by active layer thickness in organic field-effect transistors

Applied Physics Letters

Volumn 98, Issue 7, 2011, Pages

  Kano, Masataka ^a,b   Minari, Takeo ^b,c   Tsukagoshi, Kazuhito ^c,d,e   Maeda, Hiroki ^a  

^a DAI NIPPON PRINTING CO LTD   (Japan)

^b RIKEN   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^e JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCESS RESISTANCE; ACTIVE LAYER; CONTACT EFFECT; DEVICE PARAMETERS; FREE CARRIER DENSITY; GATE VOLTAGES; SEMICONDUCTOR FILMS;

FIELD EFFECT TRANSISTORS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 79951936911     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3555463     Document Type: Article

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