Atomic layer deposited alumina for use as an etch barrier against xenon difluoride etching

Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop

Volumn , Issue , 2010, Pages 194-197

  Smith, Gabriel L ^a   Polcawich, Ronald G ^a   Pulskamp, Jeffrey S ^a   Waggoner, Todd ^b   Conley, John F ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b Oregon State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTUATORS; ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; ETCHING; FLUORINE COMPOUNDS; MICROSYSTEMS; PHOTORESISTS; SILICON ON INSULATOR TECHNOLOGY; SOLID-STATE SENSORS;

ATOMIC LAYER DEPOSITED; CONFORMAL COATINGS; ISOTROPIC ETCHING; PATTERNED PHOTORESISTS; PROTECTIVE LAYERS; SILICON ON INSULATOR WAFERS; XENON DIFLUORIDE; XENON DIFLUORIDE ETCHING;

SILICON WAFERS;

EID: 79951929900     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.31438/trf.hh2010.52     Document Type: Conference Paper

References (6)

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