Piezoresistive response of five-contact vertical hall devices

Proceedings of IEEE Sensors

Volumn , Issue , 2010, Pages 562-565

  Kaufmann, T ^a   Kopp, D ^a   Purkl, F ^a   Baumann, M ^a   Ruther, P ^a   Paul, O ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FOUR-POINT BENDING; HALL DEVICES; IN-PLANE STRESS; JUNCTION FIELD EFFECTS; MECHANICAL STRESS; PIEZO-RESISTIVE; PIEZORESISTIVE EFFECTS; SENSOR GEOMETRIES; SENSOR SYSTEMS; SINGLE SENSOR; STRESS DISTRIBUTION; STRESS SENSITIVITY; VERTICAL FORCE; VERTICAL HALL SENSORS;

BEHAVIORAL RESEARCH; HALL EFFECT TRANSDUCERS; STRESS CONCENTRATION;

SENSORS;

EID: 79951905349     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSENS.2010.5690477     Document Type: Conference Paper

References (8)

1. R. S. Popovic, "The vertical Hall effect device", IEEE Electron Device Lett., vol. 5, pp. 357-358, 1984.
2. E. Schurig, "Highly sensitive vertical Hall sensors in CMOS technology", PhD thesis, Ecole Polytechnique Fédérale de Lausanne, 2004.
3. R. Sunier, "Quasi-analytical study of offset voltage due to piezoresistive effect in vertical Hall devices by mapping techniques", Dig. Tech. papers Transducers, Boston, USA, pp. 1582-1584, 2003.
4. S. Fischer, "The influence of package-induced stresses on moulded Hall sensors", Microsyst. Technol., vol. 12, pp. 69-74, 2005.
5. H. -P. H. M. Hackner, and R. Ernst, "Vertical Hall sensor", German and european patent, no. PCT/DE2002/003901, 2001.
6. P. Ruther, J. Bartholomeyczik, S. Kibbel, T. Schelb, P. Gieschke, and O. Paul, "Integrated CMOS-based sensor array for mechanical stress mapping" Proc. IEEE Sensors, Daegu, Korea, pp. 1131-1134, 2006.
7. J. Richter, M. B. Arnoldus, O. Hansen, and E. V. Thomsen, "Four point bending setup for characterization of semiconductor piezoresistance", Rev. Sci. Instrum., vol. 79, no. 4, pp. 44703 (10 pages), 2008.
8. C. Mueller-Schwanneke, F. Jost, K. Marx, S. Lindenkreuz, and K. Klitzing, "Offset reduction in silicon Hall sensors", Sens. Actuators A: Physical, vol. 81, pp. 18-22, 2000.