Power efficiency and linearity enhancement using optimized asymmetrical Doherty power amplifiers

IEEE Transactions on Microwave Theory and Techniques

Volumn 59, Issue 2, 2011, Pages 425-434

  Kim, Jangheon ^a   Fehri, Bilel ^b   Boumaiza, Slim ^b   Wood, John ^c  

^a SAMSUNG Electronics   (South Korea)

^b UNIVERSITY OF WATERLOO   (Canada)

^c FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Doherty amplifier; efficiency; linearity; linearization; power amplifier (PA); wideband code division multiple access (WCDMA)

Indexed keywords

AVERAGE POWER EFFICIENCY; CONDUCTION ANGLE; CURRENT PROFILE; DISTORTION CANCELLATION; DOHERTY; DOHERTY POWER AMPLIFIER; DRAIN EFFICIENCY; HIGH LINEARITY; HIGH-POWER; IN-DEPTH STUDY; LATERALLY DIFFUSED METAL-OXIDE SEMICONDUCTORS; LINEARITY; MEMORY EFFECTS; MEMORY POLYNOMIAL; OUTPUT POWER; PEAK ENVELOPE POWER; PEAK POWER; POWER EFFICIENCY; PREDISTORTERS; RF PERFORMANCE; WIDEBAND CODE DIVISION MULTIPLE ACCESS; WIDEBAND CODE DIVISION MULTIPLE ACCESS (WCDMA);

BROADBAND AMPLIFIERS; CODE DIVISION MULTIPLE ACCESS; FIELD EFFECT TRANSISTORS; LINEARIZATION; METALLIC COMPOUNDS; MOBILE TELECOMMUNICATION SYSTEMS; MOS DEVICES; TUNGSTEN;

DOHERTY AMPLIFIERS;

EID: 79951857829     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2010.2086466     Document Type: Article

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