RF power degradation of GaN high electron mobility transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Joh, Jungwoo ^a   Del Alamo, Jesús A ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS POINTS; DC CONDITIONS; DC STRESS; FIGURES OF MERITS; GAN HIGH ELECTRON MOBILITY TRANSISTORS; GOOD CORRELATIONS; HIGH POWER LEVEL; LIFE-TESTS; REAL TIME; RF RELIABILITY; RF STRESS; RF-POWER; SOURCE RESISTANCE;

DC POWER TRANSMISSION; DEGRADATION; ELECTRON DEVICES; ELECTRON MOBILITY; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79951847517     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703397     Document Type: Conference Paper

References (11)

1. G. Meneghesso, et al., IEEE Trans. Dev. Mat. Rel., vol. 8, p. 332, 2008.
2. J. A. del Alamo, et al., Microelectronics Rel., vol. 49, p. 1200, 2009.
3. A. M. Conway, et al., IEEE IRPS proc., p. 472, 2007.
4. J. Joh, et al., ROCS Proc., p. 185, 2008.
5. A. Chini, et al., presented at IEDM, 2009.
6. J. Joh, et al., IEEE Electron Dev. Lett., vol. 29, p. 665, 2008.
7. D. R. Greenberg, et al., IEEE Trans. Elec. Dev., vol. 43, p. 1304, 1996.
8. J. Joh, et al., ICNS Proc., p. 947, 2009.
9. A. Sozza, et al., IEEE IEDM Tech. Digest, p. 590, 2005.
10. J. Joh, et al., ROCS Proc., p. 103, 2010.
11. P. Makaram, et al., Applied Physics Letters, vol. 96, p. 233509, 2010.