Can carbon nanotube transistors be scaled without performance degradation?

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Franklin, Aaron D ^a   Tulevski, George ^a   Hannon, James B ^a   Chen, Zhihong ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CARBON NANOTUBE TRANSISTORS; CHANNEL LENGTH; ON-CURRENTS; PERFORMANCE DEGRADATION; QUANTUM LIMIT;

ELECTRON DEVICES; FIELD EFFECT TRANSISTORS;

CARBON NANOTUBES;

EID: 77952353275     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424296     Document Type: Conference Paper

References (8)

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