Impact of thinning and through silicon via proximity on high-k / metal gate first CMOS performance

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 109-110

  Mercha, A ^a   Redolfi, A ^a   Stucchi, M ^a   Minas, N ^a   Van Olmen, J ^a   Thangaraju, S ^a   Velenis, D ^a   Domae, S ^a,b   Yang, Y ^a,d   Katti, G ^a,d   Labie, R ^a   Okoro, C ^a,d   Zhao, M ^a   Asimakopoulos, P ^a   De Wolf, I ^d   Chiarella, T ^a   Schram, T ^a   Rohr, E ^a   Van Ammel, A ^a   Jourdain, A ^a   Ruythooren, W ^a   Radisic, Armini A ^a   Philipsen, H ^a   Heylen, N ^a   Kostermans, M ^a   Jaenen, P ^a   Sleeckx, E ^a   Tezcan, D Sabuncuoglu ^a   Debusschere, I ^a   Soussan, P ^a   Perry, D ^a,b   Van Der Plas, G ^a   Cho, J H ^a,c   Marchal, P ^a   Travaly, Y ^a   Beyne, E ^a   Biesemans, S ^a   Swinnen , B ^a   more..

^a IMEC   (Belgium)

^b Panasonic ^*  (Australia)

^c Samsung   (Australia)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

3-D INTEGRATION; ACTIVE DEVICES; BACK END STRUCTURES; CMOS SCALING; CMOS TECHNOLOGY; END-DEVICES; FRONT END; GATE FIRST; METAL GATE; MICRO RAMAN SPECTROSCOPY; MIXED-SIGNAL CIRCUITS; PERFORMANCE LIMITATIONS; RING OSCILLATOR; STRESS-INDUCED; THROUGH-SILICON-VIA; WAFER THINNING;

CMOS INTEGRATED CIRCUITS; ELECTRIC SIGNAL SYSTEMS; INTEGRATED CIRCUITS; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; VLSI CIRCUITS;

OSCILLATORS (ELECTRONIC);

EID: 77957880771     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556190     Document Type: Conference Paper

References (6)

1. P. Morrow et al., MRSSP, 970, 2007;.
2. Y.S. Kim et al. IEDM, 365-366, 2009;.
3. G. Katti et al., IEDM, 357-358, 2009, .
4. C. Okoro et al., ECTC, 249-255, 2007.
5. I. De Wolf, Sem. Sci. and Tech., 139-154, 1996;.
6. A.P. Karmakar, IRPS, 682-687, 2009.