Nanowire zero-capacitor DRAM transistors with and without junctions

2010 10th IEEE Conference on Nanotechnology, NANO 2010

Volumn , Issue , 2010, Pages 242-245

  Lee, Chi Woo ^a   Yan, Ran ^a   Ferain, Isabelle ^a   Kranti, Abhinav ^a   Akhavan, Nima Dehdashti ^a   Razavi, Pedram ^a   Yu, Ran ^a   Colinge, J P ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE BREAKDOWN; CAPACITOR-LESS; DYNAMIC RANDOM ACCESS MEMORY; LOW-LEAKAGE CURRENT; MULTIPLE-GATE MOSFET;

CAPACITORS; LEAKAGE CURRENTS; NANOTECHNOLOGY; NANOWIRES; STATIC RANDOM ACCESS STORAGE;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 79951824876     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2010.5697888     Document Type: Conference Paper

References (8)

1. S. Okhonin, M. Nagoga, E. Carman, R. Beffa, E. Faraoni, "New Generation of Z-RAM," IEDM Tech Dig., pp. 925-928, 2007.
2. S. Okhonin, M. Nagoga, J.M. Sallese, and P. Fazam, "A capacitor-less SOI 1T-DRAM concept", Proc.Int. SOI conf., pp. 153-154, 2001.
3. C.W. Lee, A. Afzalian, N. Dehdashti, Ran Yan, I. Ferain, J.P. Colinge, "Junctionless multigate field-effect transistor", Applied Physics Letters, Vol. 94, pp. 053511:1-2: 2009-02-16.
4. Documentation available at http://www.silvaco.com
5. C.W. Lee, I. Ferain, A. Afzalian, Ran Yan, N. Dehdashti, J.P. Colinge "Performance estimation of Junctionless multigate transistors", Solid-State Electronics 54-2, pp.97-103, 2010.
6. C.W. Lee, A. N. Nazarov, I. Ferain, N. Dehdashti, R. Yan, P. Razavi, R. Yu, R. T. Doria, J.P. Colinge, "Low subthreshold slope in junctionless multigate transistor", Applied Physics Letters, Vol. 96, 102106 (2010).
7. C.W. Lee, A. Afzalian, R. Yan, N. Dehdashti, W. Xiong, J.P. Colinge, "Drain breakdown voltage in MuGFETs: influence of physical parameters", IEEE Trans, on Electron Devices vol.55, no.12, pp.3503-3506, 2008
8. C.W. Lee, A. Afzalian, R.Yan, N. Dehdashti, W. Xiong, J.P. Colinge, "Influence of Gate Misalignment on the Electrical Characteristics of MuGFETs", Proc. VLSI-TSA 2009, pp.125-126