A 3x3, 5μm pitch, 3-transistor single photon avalanche diode array with integrated 11V bias generation in 90nm CMOS technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Henderson, Robert K ^a   Webster, Eric A G ^a,b   Walker, Richard ^a,b   Richardson, Justin A ^b   Grant, Lindsay A ^b  

^a UNIVERSITY OF EDINBURGH   (United Kingdom)

^b STMicroelectronics Ltd Bristol   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

90NM CMOS; BREAKDOWN VOLTAGE; CHARGE PUMP; CMOS AVALANCHE PHOTODIODES; DARK COUNT RATE; FILL FACTOR; HIGH VOLTAGE GENERATION; PHOTON DETECTION EFFICIENCY; PIXEL PITCH; SINGLE-PHOTON AVALANCHE DIODE ARRAYS; SMALL PIXEL PITCH; WAFER LEVEL;

CMOS INTEGRATED CIRCUITS; ELECTRON DEVICES; HETEROJUNCTION BIPOLAR TRANSISTORS; IMAGE SENSORS; JITTER; PHOTONS; PUMPS; SENSOR ARRAYS;

PIXELS;

EID: 79951817094     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703359     Document Type: Conference Paper

References (9)

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