Design of charge pump circuit with consideration of gate-oxide reliability in low-voltage CMOS processes

IEEE Journal of Solid-State Circuits

Volumn 41, Issue 5, 2006, Pages 1100-1107

  Ker, Ming Dou ^a,b   Chen, Shih Lun ^a,b   Tsai, Chia Shen ^b,c  

^a IEEE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c REALTEK SEMICONDUCTOR CORP   (Taiwan)

Author keywords

Body effect; Charge pump circuit; Gate oxide reliability; High voltage generator; Low voltage

Indexed keywords

BODY EFFECT; CHARGE PUMP CIRCUITS; GATE-OXIDE RELIABILITY; HIGH-VOLTAGE GENERATORS; LOW VOLTAGE;

CAPACITORS; CHARGE TRANSFER; ELECTRIC POTENTIAL; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRIC SWITCHBOARDS;

CMOS INTEGRATED CIRCUITS;

EID: 33646425572     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2006.872704     Document Type: Conference Paper

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