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Applied Surface Science

Volumn 257, Issue 11, 2011, Pages 4901-4905

Preparation and properties of SnS film grown by two-stage process

(6) Jiang, Feng a Shen, Honglie a Gao, Chao a Liu, Bing a Lin, Long a Shen, Zhou a

a NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS (China)

Author keywords

Photoconductivity; SnS films; Sulfurization; Tin precursor layer

Indexed keywords

ENERGY GAP; FILM PREPARATION; IV-VI SEMICONDUCTORS; LAYERED SEMICONDUCTORS; LIGHT ABSORPTION; OPTICAL FILMS; PHOTOCONDUCTIVITY; SEMICONDUCTING FILMS; SUBSTRATES; TIN COMPOUNDS; VACUUM FURNACES; X RAY DIFFRACTION;

ABSORPTION EFFICIENCY; ORTHORHOMBIC STRUCTURES; P TYPE CONDUCTIVITY; PRECURSOR LAYER; PREFERENTIAL GROWTH; SNS FILMS; SULFURIZATION; TWO-STAGE PROCESS;

SULFUR COMPOUNDS;

EID: 79951669969 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2010.12.143 Document Type: Article

Times cited : (55)

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