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Diamond and Related Materials

Volumn 20, Issue 3, 2011, Pages 380-384

Formation of ultrananocrystalline diamond films with nitrogen addition

(6) Lin, Chii Ruey a Liao, Wen Hsiang a Wei, Da Hua a Tsai, Jer Shyong a Chang, Chien Kuo a Fang, Wei Chuan b

a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY (Taiwan)

b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

Defect characterization; Microwave plasma jet chemical vapor deposition (MPJCVD); Nitrogen doped UNCD films

Indexed keywords

ARGON CONCENTRATION; ATOMIC RATIO; CHEMICAL VAPOR; DEFECT CHARACTERIZATION; FOCUSED MICROWAVES; GROWTH PROCESS; HYDROGEN ADDITION; MICROWAVE PLASMA JET; NITROGEN ADDITIONS; NITROGEN CONTENT; NITROGEN-DOPED; NITROGEN-DOPED UNCD FILMS; SCANNING TRANSMISSION ELECTRON MICROSCOPES; ULTRANANOCRYSTALLINE DIAMOND FILMS; ULTRANANOCRYSTALLINE DIAMONDS;

ARGON; CARBON FILMS; CHEMICAL VAPOR DEPOSITION; DEFECTS; DIAMOND FILMS; GRAIN BOUNDARIES; MICROWAVES; NITROGEN PLASMA; PLASMA ACCELERATORS; PLASMA DEPOSITION; PLASMA JETS; TRANSMISSION ELECTRON MICROSCOPY;

NITROGEN;

EID: 79951585976 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/j.diamond.2010.12.015 Document Type: Article

Times cited : (32)

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