P-Type and n-type Cu2O semiconductor thin films: Controllable preparation by simple solvothermal method and photoelectrochemical properties

Electrochimica Acta

Volumn 56, Issue 6, 2011, Pages 2735-2739

  Xiong, Liangbin ^a,b   Huang, Sheng ^a   Yang, Xi ^a   Qiu, Mingqiang ^a   Chen, Zhenghua ^a   Yu, Ying ^a,c  

^a CENTRAL CHINA NORMAL UNIVERSITY   (China)

^b HUANGGANG NORMAL UNIVERSITY   (China)

^c National Engineering Research Center for Floriculture   (China)

Author keywords

Homojunction; n Type Cu2O; p Type Cu2O; Photoelectrochemical property

Indexed keywords

AQUEOUS SOLUTIONS; COPPER (II); FACILE PREPARATION; HOMOJUNCTION; N-TYPE CU2O; P TYPE SEMICONDUCTOR; P-N HOMOJUNCTIONS; P-N JUNCTION; P-TYPE; P-TYPE CU2O; PH VALUE; PHOTOELECTROCHEMICAL PROPERTIES; PHOTOELECTROCHEMICALS; SEMICONDUCTOR THIN FILMS; SOLVOTHERMAL METHOD;

ELECTROCHEMISTRY; SEMICONDUCTOR JUNCTIONS; THIN FILMS;

FILM PREPARATION;

EID: 79951575992     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2010.12.054     Document Type: Article

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