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Volumn 11, Issue 1, 2011, Pages 30-34

The effect of electrostatic screening on a nanometer scale electrometer

Author keywords

Charge transport; Electrostatic screening; Nanoscale electrometer; Thin film

Indexed keywords

CHARGE TRANSPORT; ELECTROSTATIC ENVIRONMENTS; ELECTROSTATIC SCREENING; MOS-FET; NANO SCALE; NANO-METER SCALE; NANOSCALE ELECTROMETER; P-TYPE SUBSTRATES; ROOM TEMPERATURE; SCREENING EFFECT; SILICON MOSFET;

EID: 79951543891     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl102121e     Document Type: Article
Times cited : (2)

References (23)
  • 13
    • 79951535935 scopus 로고    scopus 로고
    • We specify the voltages applied to the gold contacts relative to the voltage applied to the p-type substrate
    • We specify the voltages applied to the gold contacts relative to the voltage applied to the p-type substrate .
  • 14
    • 79951528713 scopus 로고    scopus 로고
    • aSi drops, which is 5 for the experiments presented in this Letter
    • aSi drops, which is 5 for the experiments presented in this Letter.
  • 17
    • 79951523761 scopus 로고    scopus 로고
    • note
    • sub = 0 V
  • 19
    • 0004123419 scopus 로고
    • Cambridge, University Press: Cambridge and New York
    • Street, R. A. Hydrogenated Amorphous Silicon; Cambridge University Press: Cambridge and New York, 1991.
    • (1991) Hydrogenated Amorphous Silicon
    • Street, R.A.1
  • 23
    • 79951526939 scopus 로고    scopus 로고
    • note
    • We do not have a direct measurement of the absolute bandwidth of the MOSFET sensor. In principle it is given by GM/CC ∼ THz, where CC ∼ aF is the capacitance of the MOSFET constriction. For the measurement setup used in these experiments, the bandwidth was limited by the 400 kHz Femto current amplifier used to measure GM.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.