Measuring charge transport in a thin solid film using charge sensing

Nano Letters

Volumn 10, Issue 3, 2010, Pages 1037-1040

  MacLean, Kenneth ^a   Mentzel, Tamar S ^a   Kastner, Marc A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Amorphous semiconductor; Charge transport; Nanoscale electrometer; Thin film

Indexed keywords

A-SI:H; BLOCKING CONTACTS; CHARGE DETECTION; CHARGE SENSING; CHARGE SENSORS; CHARGE TRANSPORT; DENSITY OF STATE; DEVICE GEOMETRIES; DIRECT MEASUREMENT; DISPERSIVE TRANSPORT; FERMI ENERGY; FIELD EFFECTS; HIGH TEMPERATURE; HYDROGENATED AMORPHOUS SILICON (A-SI:H); NANO SCALE; NANO-METER SCALE; NANOSCALE ELECTROMETER; SILICON MOSFET; THIN SOLID FILM;

AMORPHOUS FILMS; AMORPHOUS SEMICONDUCTORS; ELECTROMETERS; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM DEVICES; THIN FILMS;

AMORPHOUS SILICON;

NANOMATERIAL;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; ELECTRON TRANSPORT; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; MATERIALS TESTING; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; STATIC ELECTRICITY; ULTRASTRUCTURE;

ELECTRON TRANSPORT; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; STATIC ELECTRICITY; TRANSISTORS, ELECTRONIC;

EID: 77949452166     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl904280q     Document Type: Article

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