A study of using femtosecond LIBS in analyzing metallic thin film-semiconductor interface

Applied Physics B: Lasers and Optics

Volumn 102, Issue 1, 2011, Pages 197-204

  Galmed, A H ^a   Kassem, A K ^a   Von Bergmann, H ^b   Harith, M A ^a  

^a Cairo University   (Egypt)

^b STELLENBOSCH UNIVERSITY   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

ABLATION RATES; ATOMIC FORCE MICROSCOPES; BEFORE AND AFTER; DEPTH-PROFILE ANALYSIS; DEPTH-RESOLVED ANALYSIS; ELECTRICAL SIGNAL; FEMTOSECONDS; INDUSTRIAL USE; LOWER COST; METAL ALLOYS; METALLIC THIN FILMS; RUTHERFORD BACK-SCATTERING; SEMICONDUCTOR INTERFACES; SILICON (100); THEORETICAL SIMULATION; THERMAL-ANNEALING; TI THIN FILMS; VERY LARGE SCALE INTEGRATED;

COMPUTER SIMULATION; DEPTH PROFILING; FILM THICKNESS; INDUSTRIAL APPLICATIONS; THIN FILMS; X RAY DIFFRACTION;

METAL ANALYSIS;

EID: 79851508542     PISSN: 09462171     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00340-010-4144-1     Document Type: Article

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