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Volumn 52, Issue 3, 1998, Pages 444-448

Depth profiling of phosphorus in photonic-grade silicon using laser-induced breakdown spectrometry

Author keywords

Depth profiling; Laser induced breakdown spectrometry; LIBS; Phosphorus distribution analysis; Silicon wafers

Indexed keywords

CHARGE COUPLED DEVICES; DIFFUSION IN SOLIDS; EMISSION SPECTROSCOPY; LASER ABLATION; LASER DIAGNOSTICS; LASER PRODUCED PLASMAS; NEODYMIUM LASERS; PHOSPHORUS; SEMICONDUCTOR DOPING;

EID: 0032026938     PISSN: 00037028     EISSN: None     Source Type: Journal    
DOI: 10.1366/0003702981943662     Document Type: Article
Times cited : (69)

References (30)
  • 12
    • 0002241348 scopus 로고
    • Spectrochemical Analysis Using Laser Plasma Excitation
    • L. J. Radziemski and D. A. Cremers, Eds. Marcel Dekker, New York, Chap. 7
    • L. J. Radziemski and D. A. Cremers, "Spectrochemical Analysis Using Laser Plasma Excitation", in Laser-Induced Plasmas and Applications, L. J. Radziemski and D. A. Cremers, Eds. (Marcel Dekker, New York, 1989), Chap. 7, p. 295.
    • (1989) Laser-Induced Plasmas and Applications , pp. 295
    • Radziemski, L.J.1    Cremers, D.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.