Comparison between single- and double-pulse LIBS at different air pressures on silicon target

Applied Physics B: Lasers and Optics

Volumn 83, Issue 4, 2006, Pages 651-657

  Amal, K ^a   Elnaby, S H ^a   Palleschi, V ^b   Salvetti, A ^b   Harith, M A ^a  

^a Cairo University   (Egypt)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; IONS; PLASMAS; SILICON; SPECTROSCOPIC ANALYSIS;

ELECTRON NUMBER DENSITIES; IONIC LINES; LASER-INDUCED BREAKDOWN SPECTROSCOPY (LIBS); N-TYPE SILICON(111);

LASER PULSES;

EID: 33744530787     PISSN: 09462171     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00340-006-2259-1     Document Type: Article

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