SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 88, Issue 4, 2011, Pages 499-502

Germanium substrate loss during thermal processing

(7) Kaiser, R J a Koffel, S b Pichler, P a,b Bauer, A J b Amon, B b Frey, L a,b Ryssel, H a,b

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB (Germany)

Author keywords

Annealing; Doping profiles; Elemental semiconductors; Germanium; Thermal etching

Indexed keywords

ARRHENIUS LAW; BULK MATERIALS; CAPPING LAYER; DESORPTION RATE; DIRECT-EVAPORATION; DOPING PROFILES; ELEMENTAL SEMICONDUCTORS; GERMANIUM DIOXIDE; GERMANIUM SUBSTRATES; HIGH CARRIER MOBILITY; LOW VAPOR PRESSURES; P-N JUNCTION; PATTERNED SILICON; SUBSTRATE LOSS; SURFACE DEGRADATION; THERMAL ETCHING; THERMAL PROCESSING;

ACTIVATION ENERGY; ANNEALING; CARRIER MOBILITY; DESORPTION; ETCHING; EVAPORATION; ION IMPLANTATION; OXYGEN; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SILICA; SUBSTRATES; SURFACE ROUGHNESS; WATER VAPOR;

GERMANIUM;

EID: 79751535393 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2010.08.031 Document Type: Conference Paper

Times cited : (31)

References (17)

1
- 79751527876
- Available from
- Available from: < http://www.itrs.net/ >.

2
- 0007665417
- W. Meer, and D. Pommering Z. Angew. Phys. 23 1967 369
- (1967) Z. Angew. Phys. , vol.23 , pp. 369
- Meer, W.¹ Pommering, D.²

3
- 33845293760
- A. Chroneos, D. Skarlatos, C. Tsamis, A. Christofi, D.S. McPhail, and R. Hung Mater. Sci. Semicond. Process. 9 2006 640
- (2006) Mater. Sci. Semicond. Process. , vol.9 , pp. 640
- Chroneos, A.¹ Skarlatos, D.² Tsamis, C.³ Christofi, A.⁴ McPhail, D.S.⁵ Hung, R.⁶

4
- 51749107674
- N. Ioannou, D. Skarlatos, C. Tsamis, C.A. Krontiras, S.N. Georga, A. Christofi, and D.S. McPhail Appl. Phys. Lett. 93 2008 101910
- (2008) Appl. Phys. Lett. , vol.93 , pp. 101910
- Ioannou, N.¹ Skarlatos, D.² Tsamis, C.³ Krontiras, C.A.⁴ Georga, S.N.⁵ Christofi, A.⁶ McPhail, D.S.⁷

5
- 69749114107
- H. Seo, F. Bellenger, K.B. Chung, M. Houssa, M. Meuris, M. Heyns, and G. Lucovsky J. Appl. Phys. 106 2009 044909
- (2009) J. Appl. Phys. , vol.106 , pp. 044909
- Seo, H.¹ Bellenger, F.² Chung, K.B.³ Houssa, M.⁴ Meuris, M.⁵ Heyns, M.⁶ Lucovsky, G.⁷

6
- 44449095646
- D.P. Brunco, B. De Jaeger, G. Eneman, J. Mitard, G. Hellings, A. Satta, V. Terzieva, L. Souriau, F.E. Leys, G. Pourtois, M. Houssa, G. Winderickx, E. Vrancken, S. Sioncke, K. Opsomer, G. Nicholas, M. Caymax, A. Stesmans, J. Van Steenbergen, P.W. Mertens, M. Meuris, and M.M. Heyns J. Electrochem. Soc. 155 2008 H552
- (2008) J. Electrochem. Soc. , vol.155 , pp. 552
- Brunco, D.P.¹ De Jaeger, B.² Eneman, G.³ Mitard, J.⁴ Hellings, G.⁵ Satta, A.⁶ Terzieva, V.⁷ Souriau, L.⁸ Leys, F.E.⁹ Pourtois, G.¹⁰ Houssa, M.¹¹ Winderickx, G.¹² Vrancken, E.¹³ Sioncke, S.¹⁴ Opsomer, K.¹⁵ Nicholas, G.¹⁶ Caymax, M.¹⁷ Stesmans, A.¹⁸ Van Steenbergen, J.¹⁹ Mertens, P.W.²⁰ Meuris, M.²¹ Heyns, M.M.²² more..

7
- 0001626398
- R.E. Honig RCA Rev. 18 1957 195
- (1957) RCA Rev. , vol.18 , pp. 195
- Honig, R.E.¹

8
- 0038299602
- J. Drowart, F. Degrve, G. Verhaegen, and R. Colin Trans. Faraday Soc. 61 1965 1072
- (1965) Trans. Faraday Soc. , vol.61 , pp. 1072
- Drowart, J.¹ Degrve, F.² Verhaegen, G.³ Colin, R.⁴

9
- 84982383110
- W. Bues, and H.V. Wartenberg Z. Anorg. Allg. Chem. 266 1951 281
- (1951) Z. Anorg. Allg. Chem. , vol.266 , pp. 281
- Bues, W.¹ Wartenberg, H.V.²

10
- 0009746687
- E. Shimazaki, N. Matsumoto, and K. Niwa Bull. Chem. Soc. Jpn. 30 1957 969
- (1957) Bull. Chem. Soc. Jpn. , vol.30 , pp. 969
- Shimazaki, E.¹ Matsumoto, N.² Niwa, K.³

11
- 0022275314
- O.J. Gregory, and E.E. Crisman ACS Symp. Ser. 290 1985 178
- (1985) ACS Symp. Ser. , vol.290 , pp. 178
- Gregory, O.J.¹ Crisman, E.E.²

12
- 0027624830
- D.A. Hansen, and J.B. Hudson Surf. Sci. 292 1993 17
- (1993) Surf. Sci. , vol.292 , pp. 17
- Hansen, D.A.¹ Hudson, J.B.²

13
- 0014763947
- R.J. Madix, and A.A. Susu Surf. Sci. 20 1970 377
- (1970) Surf. Sci. , vol.20 , pp. 377
- Madix, R.J.¹ Susu, A.A.²

14
- 79751534381
- H.C. Gatos, and M.C. Lavine Ann. N. Y. Acad. Sci. 101 1963 983
- (1963) Ann. N. Y. Acad. Sci. , vol.101 , pp. 983
- Gatos, H.C.¹ Lavine, M.C.²

15
- 0037856203
- J.T. Law, and P.S. Meigs J. Electrochem. Soc. 104 1957 154
- (1957) J. Electrochem. Soc. , vol.104 , pp. 154
- Law, J.T.¹ Meigs, P.S.²

16
- 78650539491
- A. Toriumi, S.K. Wang, C.H. Lee, M. Yoshida, K. Kita, T. Nishimura, and K. Nagashio ECS Trans. 28 2010 171
- (2010) ECS Trans. , vol.28 , pp. 171
- Toriumi, A.¹ Wang, S.K.² Lee, C.H.³ Yoshida, M.⁴ Kita, K.⁵ Nishimura, T.⁶ Nagashio, K.⁷

17
- 79751529313
- M.J. Spaarnay Ann. N. Y. Acad. Sci. 101 1963 973
- (1963) Ann. N. Y. Acad. Sci. , vol.101 , pp. 973
- Spaarnay, M.J.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.