SCOPUS 정보 검색 플랫폼

Applied Physics A: Materials Science and Processing

Volumn 102, Issue 2, 2011, Pages 477-483

Effects of the experimental conditions on the growth of crystalline ZnSe nano-needles by pulsed laser deposition

(7) Lai, J S a Chen, L a Fu, X N a Sun, J a Ying, Z F a Wu, J D a Xu, N a

a FUDAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; CATALYST LAYERS; COATED SUBSTRATES; DIFFERENT SUBSTRATES; EXPERIMENT CONDITION; EXPERIMENTAL CONDITIONS; SILICON (100); SUBSTRATE MATERIAL; SUBSTRATE TEMPERATURE;

CATALYSTS; CRYSTALLINE MATERIALS; NANONEEDLES; NEEDLES; PULSED LASER DEPOSITION; PULSED LASERS; SPHERES;

SUBSTRATES;

EID: 79651474318 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-010-5941-4 Document Type: Article

Times cited : (10)

References (18)

1
- 0001155031
- Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates
- DOI 10.1063/1.121781, PII S0003695198032276
- K. Katayama H. Yao F. Nakanishi H. Doi A. Saegusa T. Shirakawa 1998 Appl. Phys. Lett. 73 (Pubitemid 128677894)
- (1998) Applied Physics Letters , vol.73 , Issue.1 , pp. 102-104
- Katayama, K.¹ Yao, H.² Nakanishi, F.³ Doi, H.⁴ Saegusa, A.⁵ Okuda, N.⁶ Yamada, T.⁷ Matsubara, H.⁸ Irikura, M.⁹ Matsuoka, T.¹⁰ Takebe, T.¹¹ Nishine, S.¹² Shirakawa, T.¹³

2
- 0000859502
- 10.1063/1.125941 2000ApPhL.76.1069I
- H. Ishikura T. Abe N. Fukuda H. Kasada K. Ando 2000 Appl. Phys. Lett. 76 1069 10.1063/1.125941 2000ApPhL..76.1069I
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1069
- Ishikura, H.¹ Abe, T.² Fukuda, N.³ Kasada, H.⁴ Ando, K.⁵

3
- 0034712059
- Control of thickness and orientation of solution-grown silicon nanowires
- DOI 10.1126/science.287.5457.1471
- J.D. Holmes K.P. Johnston R.C. Doty B.A. Korgel 2000 Science 287 1471 10.1126/science.287.5457.1471 2000Sci...287.1471H (Pubitemid 30127137)
- (2000) Science , vol.287 , Issue.5457 , pp. 1471-1473
- Holmes, J.D.¹ Johnston, K.P.² Doty, R.C.³ Korgel, B.A.⁴

4
- 0037033988
- Growth of nanowire superlattice structures for nanoscale photonics and electronics
- DOI 10.1038/415617a
- M.S. Gudiksen L.J. Lauhon J. Wang D.C. Smith C.M. Lieber 2002 Nature 415 617 10.1038/415617a 2002Natur.415..617G (Pubitemid 34136383)
- (2002) Nature , vol.415 , Issue.6872 , pp. 617-620
- Gudiksen, M.S.¹ Lauhon, L.J.² Wang, J.³ Smith, D.C.⁴ Lieber, C.M.⁵

5
- 61349087984
- 10.1149/1.3077580
- C.H. Hsiao S.J. Chang S.B. Wang S.P. Chang T.C. Li W.J. Lin C.H. Ko T.M. Kuan B.R. Huang 2009 J. Electrochem. Soc. 156 73 10.1149/1.3077580
- (2009) J. Electrochem. Soc. , vol.156 , pp. 73
- Hsiao, C.H.¹ Chang, S.J.² Wang, S.B.³ Chang, S.P.⁴ Li, T.C.⁵ Lin, W.J.⁶ Ko, C.H.⁷ Kuan, T.M.⁸ Huang, B.R.⁹

6
- 54949139608
- 10.1002/adma.200800145
- K. Wang J. Chen W. Zhou Y. Zhang Y. Yan J. Pern A. Mascarenhas 2008 Adv. Mater. 20 3248 10.1002/adma.200800145
- (2008) Adv. Mater. , vol.20 , pp. 3248
- Wang, K.¹ Chen, J.² Zhou, W.³ Zhang, Y.⁴ Yan, Y.⁵ Pern, J.⁶ Mascarenhas, A.⁷

7
- 33748522367
- Fast electron transport in metal organic vapor deposition grown dye-sensitized ZnO nanorod solar cells
- DOI 10.1021/jp062865q
- E. Galoppini J. Rochford H. Chen G. Saraf Y. Lu A. Hagfeldtand G. Boschloo 2006 J. Phys. Chem. B 110 16159 10.1021/jp062865q (Pubitemid 44373331)
- (2006) Journal of Physical Chemistry B , vol.110 , Issue.33 , pp. 16139-16161
- Galoppini, E.¹ Rochford, J.² Chen, H.³ Saraf, G.⁴ Lu, Y.⁵ Hagfeldt, A.⁶ Boschloo, G.⁷

8
- 2342618732
- 10.1063/1.1695096 2004ApPhL.84.2641Z
- X.T. Zhang K.M. Ip Z. Liu Y.P. Leung Q. Li S.K. Hark 2004 Appl. Phys. Lett. 84 2641 10.1063/1.1695096 2004ApPhL..84.2641Z
- (2004) Appl. Phys. Lett. , vol.84 , pp. 2641
- Zhang, X.T.¹ Ip, K.M.² Liu, Z.³ Leung, Y.P.⁴ Li, Q.⁵ Hark, S.K.⁶

9
- 0942299466
- 10.1063/1.1638633 2003ApPhL.83.5533Z
- X.T. Zhang Z. Liu Y.P. Leung Q. Li S.K. Hark 2003 Appl. Phys. Lett. 83 5533 10.1063/1.1638633 2003ApPhL..83.5533Z
- (2003) Appl. Phys. Lett. , vol.83 , pp. 5533
- Zhang, X.T.¹ Liu, Z.² Leung, Y.P.³ Li, Q.⁴ Hark, S.K.⁵

10
- 0141788992
- 10.1016/S0009-2614(03)01197-7 2003CPL.377.367Z
- Y.C. Zhu Y. Bando 2003 Chem. Phys. Lett. 377 367 10.1016/S0009-2614(03) 01197-7 2003CPL...377..367Z
- (2003) Chem. Phys. Lett. , vol.377 , pp. 367
- Zhu, Y.C.¹ Bando, Y.²

11
- 0038317955
- 10.1063/1.1573334 2003ApPhL.82.3330X
- B. Xiang H.Z. Zhang G.H. Li F.H. Yang F.H. Su R.M. Wang J. Xu X.C. Lu X.C. Sun Q. Zhao D.P. Yu 2002 Appl. Phys. Lett. 82 3330 10.1063/1.1573334 2003ApPhL..82.3330X
- (2002) Appl. Phys. Lett. , vol.82 , pp. 3330
- Xiang, B.¹ Zhang, H.Z.² Li, G.H.³ Yang, F.H.⁴ Su, F.H.⁵ Wang, R.M.⁶ Xu, J.⁷ Lu, X.C.⁸ Sun, X.C.⁹ Zhao, Q.¹⁰ Yu, D.P.¹¹

12
- 0142120586
- 10.1063/1.1615293 2003ApPhL.83.2665C
- Y.F. Chan X.F. Duan S.K. Chan I.K. Sou X.X. Zhang N. Wang 2003 Appl. Phys. Lett. 83 2665 10.1063/1.1615293 2003ApPhL..83.2665C
- (2003) Appl. Phys. Lett. , vol.83 , pp. 2665
- Chan, Y.F.¹ Duan, X.F.² Chan, S.K.³ Sou, I.K.⁴ Zhang, X.X.⁵ Wang, N.⁶

13
- 0037065031
- Atomic layer deposition of ZnSe/CdSe superlattice nanowires
- DOI 10.1063/1.1521570
- R. Solanki J. Huo J.L. Freeouf 2002 Appl. Phys. Lett. 81 3864 10.1063/1.1521570 2002ApPhL..81.3864S (Pubitemid 35445535)
- (2002) Applied Physics Letters , vol.81 , Issue.20 , pp. 3864-3866
- Solanki, R.¹ Huo, J.² Freeouf, J.L.³ Miner, B.⁴

14
- 37149052808
- Growth of ZnSe nanowires by pulsed-laser deposition
- DOI 10.1116/1.2794052
- T. Zhang T. Shen W. Hu J. Sun J. Wu Z. Ying N. Xu 2007 J. Vac. Sci. Technol. B 25 1823 10.1116/1.2794052 (Pubitemid 350255799)
- (2007) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.25 , Issue.6 , pp. 1823-1826
- Zhang, T.¹ Shen, Y.² Hu, W.³ Sun, J.⁴ Wu, J.⁵ Ying, Z.⁶ Xu, N.⁷

15
- 0032072070
- 10.1016/S0169-4332(97)00681-8 1998ApSS.127.496R
- Y.R. Ryu S. Zhu S.W. Han H.W. White P.F. Miceli H.R. Chandrasekhar 1998 Appl. Surf. Sci. 127 496 10.1016/S0169-4332(97)00681-8 1998ApSS..127..496R
- (1998) Appl. Surf. Sci. , vol.127 , pp. 496
- Ryu, Y.R.¹ Zhu, S.² Han, S.W.³ White, H.W.⁴ Miceli, P.F.⁵ Chandrasekhar, H.R.⁶

16
- 0032475685
- 10.1016/S0022-0248(98)00544-2 1998JCrGr.193.516P
- J.W. Park C.M. Rouleau D.H. Lowndes 1998 J. Cryst. Growth 193 516 10.1016/S0022-0248(98)00544-2 1998JCrGr.193..516P
- (1998) J. Cryst. Growth , vol.193 , pp. 516
- Park, J.W.¹ Rouleau, C.M.² Lowndes, D.H.³

17
- 33751122778
- 10.1063/1.1753975 1964ApPhL.4.89W
- R.S. Wagner W.C. Ellis 1964 Appl. Phys. Lett. 4 89 10.1063/1.1753975 1964ApPhL...4...89W
- (1964) Appl. Phys. Lett. , vol.4 , pp. 89
- Wagner, R.S.¹ Ellis, W.C.²

18
- 0000434281
- Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms
- DOI 10.1063/1.1335640
- T.I. Kamins R.S. Williams D.P. Basile T. Hasjedal S. Harris 2001 J. Appl. Phys. 89 1008 10.1063/1.1335640 2001JAP....89.1008K (Pubitemid 33661850)
- (2001) Journal of Applied Physics , vol.89 , Issue.2 , pp. 1008-1016
- Kamins, T.I.¹ Williams, R.S.² Basile, D.P.³ Hesjedal, T.⁴ Harris, J.S.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.