Switching phase diagrams of current-induced magnetization switching in asymmetric MgO-based magnetic tunnel junctions

Journal of Physics D: Applied Physics

Volumn 44, Issue 6, 2011, Pages

  Park, Seung Young ^a   Han, Jae Ho ^b   Oh, Se Chung ^c   Lee, Jang Eun ^c   Nam, Kyung Tae ^c   Lee, Hyun Woo ^b   Jo, Younghun ^a   Lee, Kyung Jin ^d  

^a Korea Basic Science Institute (KBSI)   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c SAMSUNG Electronics   (South Korea)

^d Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY FIELD; CURRENT-INDUCED MAGNETIZATION SWITCHING; FERROMAGNETIC ELECTRODES; FUNDAMENTAL CHARACTERISTICS; INTRINSIC ENERGY; LAYER COMPOSITION; LOW TEMPERATURES; MAGNETIC CELLS; MAGNETIC TUNNEL JUNCTION; MATERIAL COMPOSITIONS; ON CURRENTS; PATTERN SIZE; SPIN TRANSFER TORQUE;

MAGNETIC DEVICES; MAGNETIZATION; PHASE DIAGRAMS; SWITCHING;

TUNNEL JUNCTIONS;

EID: 79551697340     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/6/064008     Document Type: Article

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