High-bias backhopping in nanosecond time-domain spin-torque switches of MgO-based magnetic tunnel junctions

Journal of Applied Physics

Volumn 105, Issue 7, 2009, Pages

  Sun, J Z ^a   Gaidis, M C ^a   Hu, G ^a   O'Sullivan, E J ^a   Brown, S L ^a   Nowak, J J ^a   Trouilloud, P L ^a   Worledge, D C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS MAGNETIC FIELDS; FREE LAYERS; MAGNETIC SWITCHING; MAGNETIC TUNNEL JUNCTIONS; NANOMAGNET; SPIN TORQUES; SWITCHING PROBABILITIES; THERMALLY ACTIVATED; TIME DOMAINS; VOLTAGE PULSE;

ATOMS; BIAS VOLTAGE; HOT ELECTRONS; MAGNETIC DEVICES; MAGNETIC FIELDS; SEMICONDUCTOR JUNCTIONS; SPIN DYNAMICS; SWITCHES; TIME SWITCHES; TUNNELS; WAVEGUIDE JUNCTIONS;

TUNNEL JUNCTIONS;

EID: 65249108884     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3058614     Document Type: Article

References (17)

1. R. H. Koch, Phys. Rev. Lett. 92, 088302 (2004).
2. J. Z. Sun, Proc. SPIE 5359, 445 (2004).
3. Z. Li, Phys. Rev. B 69, 134416 (2004).
4. D. M. Apalkov, Phys. Rev. B 72, 180405 (2005).
5. P. B. Visscher, J. Appl. Phys. 97, 10C704 (2005).
6. J. He, J. Appl. Phys. 101, 09A501 (2007).
7. K. Ito, J. Appl. Phys. 99, 08G519 (2006).
8. T. Devolder, Phys. Rev. Lett. 100, 057206 (2008).
9. J. C. Sankey, Nat. Phys. 4, 67 (2008).
10. H. Kubota, Nat. Phys. 4, 37 (2008).
11. M. Yoshikawa, J. Appl. Phys. 101, 09A511 (2007).
12. Z. Li, Phys. Rev. Lett. 100, 246602 (2008).
13. J. Z. Sun, J. Magn. Magn. Mater. 247, L237 (2002).
14. J. Z. Sun, J. Appl. Phys. 93, 6859 (2003).
15. A. Deac, Phys. Rev. B 73, 064414 (2006).
16. G. D. Fuchs, Appl. Phys. Lett. 86, 152509 (2005).
17. S. Petit, Phys. Rev. Lett. 98, 077203 (2007).