Wafer-fused heterostructures: Application to vertical cavity surface-emitting lasers emitting in the 1310 nm band

Semiconductor Science and Technology

Volumn 26, Issue 1, 2011, Pages

  Sirbu, Alexei ^a   Iakovelv, Vladimir ^a   Mereuta, Alexandru ^a,b   Caliman, Andrei ^a   Suruceanu, Grigore ^a,b   Kapon, Eli ^a  

^a EPFL   (Switzerland)

^b BeamExpress SA   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; DOUBLE HETEROSTRUCTURES; FUSION TECHNOLOGY; HETEROSTRUCTURES; LONG WAVELENGTH; MULTIQUANTUM WELLS; OUTPUT POWER LEVELS; SIDE MODE SUPPRESSION RATIOS; SINGLE MODE; TEMPERATURE RANGE; VERTICAL-CAVITY SURFACE EMITTING LASER; WAFER LEVEL;

CRYSTALS; SEMICONDUCTOR QUANTUM WELLS; SURFACE EMITTING LASERS; TRANSCEIVERS;

QUANTUM WELL LASERS;

EID: 79551692177     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/1/014016     Document Type: Article

References (15)

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