30°C CW operation of 1.52μm InGaAsP/AIGaAs vertical cavity lasers with in situ built-in lateral current confinement by localised fusion

Electronics Letters

Volumn 34, Issue 18, 1998, Pages 1744-1745

  Syrbu, A V ^a   Iakovlev, V P ^a,d   Berseth, C A ^a   Dehaese, O ^a   Rudra, A ^a   Kapon, E ^a   Jacquet, J ^b   Boucart, J ^b   Stark, C ^b   Gaborit, F ^b   Sagnes, I ^c   Harmand, J C ^c   Raj, R ^c  

^a EPFL   (Switzerland)

^b OPTO+   (France)

^c ORANGE LABS   (France)

^d TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; LASER MODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

VERTICAL CAVITY LASERS (VCL);

SEMICONDUCTOR LASERS;

EID: 0032480189     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981215     Document Type: Article

References (7)

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2. SYRBU, A.V., IAKOVLEV, V.R., BERSETH, C.-A., RUDRA, A., and KAPON, E.: 'Room-temperature pulsed operation of 1.52μm vertical cavity lasers obtained by localised fusion'. CLEO/EUROPE, 1998, Paper CMH2
3. SYRBU, A.V., FERNANDEZ, J., BEHREND, J., BERSETH, C.-A., CARLIN, J.F., RUDRA, A., and KAPON, E.: 'InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion', Electron Lett., 1997, 33, pp. 866-868
4. SYRBU, A.V., FERNANDEZ, J., BEHREND, J., SAGALOWICZ, L., IAKOVLEV, V.P., CARLIN, J.F., BERSETH, C.A., RUDRA, A., and KAPON, E.: 'Characteristics of InAsP/InGaAsP edge emitting laser diodes obtained by localised fusion on GaAs substrates', Electron. Lett., 1997, 33, pp. 1954-1955
5. SYRBU, A.V., BEHREND, J., FERNANDEZ, J., CARLIN, J.F., BERSETH, C-A., IAKOVLEV, V.P., RUDRA, A., and KAPON, E.: 'Thermal stability of InP-based structures for wafer fused laser diodes', J. Cryst. Growth, 1998, 188, pp. 338-342
6. QIAN, Y., ZHU, Z.H., LO, Y.H., HUFFAKER, DL., DEPPE, D.G., HOU, H.Q., HAMMONS, B.E., LIN, W., and TU, Y.K.:'Submilliamp 1.3μm vertical-cavity surface-emitting lasers with threshold current density of < 500A/cm2', Electron. Lett., 1997, 33, pp. 1052-1054
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