InP/AlGaInP quantum dot laser emitting at 638 nm

Journal of Crystal Growth

Volumn 315, Issue 1, 2011, Pages 123-126

  Schulz, W M ^a   Eichfelder, M ^a   Rossbach R ^a   Jetter, M ^a   Michler, P ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

A1. Low dimensional structures; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting IIIV materials; B2. Semiconducting indium phosphide; B3. Solid state lasers

Indexed keywords

A3. METALORGANIC VAPOR PHASE EPITAXY; B2. SEMICONDUCTING INDIUM PHOSPHIDE; B3. SOLID STATE LASERS; LOW DIMENSIONAL STRUCTURE; SEMI CONDUCTING III-V MATERIALS;

EPITAXIAL GROWTH; INDIUM PHOSPHIDE; PULSED LASERS; PUMPING (LASER); QUANTUM DOT LASERS; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM DOTS; SOLID STATE LASERS; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 79551684886     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.07.018     Document Type: Article

References (20)

1. M. Asada, Y. Miyamoto, and Y. Suematsu Gain and the threshold of three dimensional quantum-box lasers IEEE J. Quantum Electron. 22 1986 1915
2. Y. Arakawa, and H. Sakaki Multidimensional quantum well laser and temperature dependence of its threshold current Appl. Phys. Lett. 40 1982 939
3. -1 signal-regenerative amplifiers J. Phys. D: Appl. Phys. 38 2005 2126
4. K.M. Groom, A.I. Tartakovskii, D.J. Mowbray, M.S. Skolnick, P.M. Smowton, M. Hopkinson, and G. Hill Comparative study of InGaAs quantum dot lasers with different degrees of dot layer confinement Appl. Phys. Lett. 81 2002 1
5. F. Schfer, J.P. Reithmaier, and A. Forchel High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer Appl. Phys. Lett. 74 1999 2915
6. M.K. Zundel, N.Y. Jin-Phillipp, F. Phillipp, K. Eberl, T. Riedl, E. Fehrenbacher, and A. Hangleiter Red-light-emitting injection laser based on InP/GaInP self-assembled quantum dots Appl. Phys. Lett. 73 1998 1784
7. M. Klude, T. Passow, R. Krger, and D. Hommel Electrically pumped lasing from CdSe quantum dots Electron. Lett. 37 2001 1119
8. K. Tachibana, T. Someya, Y. Arakawa, R. Werner, and A. Forchel Room-temperature lasing oscillation in an InGaN selfassembled quantum dot laser Appl. Phys. Lett. 75 1999 2605
9. R.L. Sellin, C. Ribbat, M. Grundmann, N.N. Ledentsov, and D. Bimberg Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers Appl. Phys. Lett. 78 2001 1207
10. A. Krysa, S. Liew, J. Lin, J. Roberts, J. Lutti, G. Lewis, and P. Smowton Low threshold InP/AlGaInP on GaAs QD laser emitting at 740 nm J. Crystal Growth 298 2007 663
11. 0.54P quantum wells Appl. Phys. Lett. 84 2004 666
12. M. Eichfelder, W.-M. Schulz, M. Reischle, M. Wiesner, R. Roßbach, M. Jetter, and P. Michler Room-temperature lasing of electrically pumped red-emitting InP / (Al 0.20 Ga 0.80 ) 0.51 In 0.49 P quantum dots embedded in a vertical microcavity Appl. Phys. Lett. 95 2009 131107
13. 1-xInP J. Crystal Growth 298 2006 595
14. R. Roßbach, W.-M. Schulz, M. Eichfelder, M. Reischle, G.J. Beirne, M. Jetter, and P. Michler Vertical asymmetric double quantum dots J. Crystal Growth 310 2008 5098
15. I.N. Stranski, and L. Krastanow Zur Theorie der orientierten Aussscheidung von Ionenkristallen aufeinander Sitz. Ber. Akad. Wiss. Math.-naturwiss. Kl. Abt. IIb 146 1938 797
16. W.-M. Schulz, R. Roßbach, M. Reischle, G.J. Beirne, M. Bommer, M. Jetter, and P. Michler Optical and structural properties of InP quantum dots embedded in (Alx Ga 1 x ) 0.51 In 0.49 P Phys. Rev. B 79 2009 035329
17. G.J. Beirne, M. Reischle, R. Roßbach, W.-M. Schulz, M. Jetter, J. Seebeck, P. Gartner, C. Gies, F. Jahnke, and P. Michler Electronic shell structure and carrier dynamics of high aspect ratio InP single quantum dots Phys. Rev. B 75 2007 195302
18. S. Fafard, K. Hinzer, S. Raymond, M. Dion, J. McCaffrey, Y. Feng, and S. Charbonneau Red-emitting semiconductor quantum dot lasers Science 274 1996 5291
19. J. Porsche, M. Ost, F. Scholz, A. Fantini, F. Phillipp, T. Riedl, and A. Hangleiter Growth of self-assembled InP quantum islands for red-light-emitting injection lasers IEEE J. Sel. Top. Quantum Electron. 6 2000 482
20. L.A. Coldren, and S. Corzime Diode Lasers and Photonic Integrated Circuits 1995 Wiley New York