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Volumn 98, Issue 3, 2011, Pages

Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

(12) Naranjo, F B a Kandaswamy, P K b Valdueza Felip, S a Calvo, V b Gonzalez Herraez M a Martin Lopez S c Corredera, P c Mndez J A c Mutta, G R d Lacroix, B d Ruterana, P d Monroy, E b

a UNIVERSITY OF ALCALÁ (Spain)

b CEA GRENOBLE (France)

c INSTITUTO DE ÓPTICA (Spain)

d Direction de la Recherche Fondamentale (France)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH REPETITION RATE; MULTIPLE-QUANTUM-WELL STRUCTURES; NONLINEAR ABSORPTION COEFFICIENT; NONLINEAR ABSORPTIONS; NONLINEAR OPTICAL ABSORPTION; OPTICAL TELECOMMUNICATION; REVERSE SATURABLE ABSORPTION; SATURABLE ABSORPTION; TWO-PHOTON ABSORPTIONS; Z-SCAN METHOD;

GALLIUM; LIGHT ABSORPTION; NONLINEAR OPTICS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; TWO PHOTON PROCESSES;

ABSORPTION;

EID: 79251558474 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3535609 Document Type: Article

Times cited : (29)

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