Lateral, Ge, nanowire growth on SiO2

Nanotechnology

Volumn 22, Issue 6, 2011, Pages

  Quitoriano, Nathaniel J ^a,b   Kamins, Theodore I ^a,c  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b MCGILL UNIVERSITY   (Canada)

^c Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL INTERFACES; HIGH QUALITY; NANOWIRE GROWTH; SI DEVICES; SUBSTRATE PLANES; VAPOR-LIQUID-SOLID;

GERMANIUM; NANOWIRES; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79251553760     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/6/065201     Document Type: Article

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