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Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 85-88

P- and n-type doping in SiC sublimation epitaxy using highly doped substrates

(5) Hens, Philip a Syväjärvi, Mikael b Oehlschläger, Felix a Wellmann, Peter a Yakimova, Rositza b

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

b LINKÖPING UNIVERSITY (Sweden)

Author keywords

Compensation; Doping; Growth; Sublimation

Indexed keywords

COMPENSATION (PERSONNEL); DOPING (ADDITIVES); GROWTH (MATERIALS); SILICON CARBIDE; SUBLIMATION;

CO-DOPED; CO-DOPING; DOPED SUBSTRATES; GROWTH PROCESS; IV CHARACTERISTICS; P AND N TYPES; SUBLIMATION EPITAXY; SUBSTRATE DOPING;

SUBSTRATES;

EID: 79251536867 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.615-617.85 Document Type: Conference Paper

Times cited : (1)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.