Dependence of DAP emission properties on impurity concentrations in N-/B-co-doped 6H-SiC

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 335-338

  Murata, Satoshi ^a   Nakamura, Yoshihiro ^a   Maeda, Tomohiko ^a   Shibata, Yoko ^a   Ikuta, Mina ^a   Sugiura, Masaaki ^a   Nitta, Shugo ^a   Iwaya, Motoaki ^a   Kamiyama, Satoshi ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a   Yoshimoto, Masahiro ^b   Furusho, Tomoaki ^c   Kinoshita, Hiroyuki ^c  

^a MEIJO UNIVERSITY   (Japan)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^c SiXON Ltd   (Japan)

Author keywords

DAP; Doping concentration; Light emitting diode; Optical property; Photoluminescence

Indexed keywords

EFFICIENCY; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY;

DONOR-ACCEPTOR PAIRS; DOPED SAMPLE; DOPING CONCENTRATION; EMISSION EFFICIENCIES; EMISSION PROPERTIES; IMPURITY CONCENTRATION; PHOTOLUMINESCENCE MEASUREMENTS; SIC EPILAYERS;

SILICON CARBIDE;

EID: 38449094198     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.335     Document Type: Conference Paper

References (3)

1. S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma and S. F. Chichibu, J. Appl. Phys. 99, 93108 (2006).
2. M. Ohishi, J. J. Appl. Phys. Vol.25 (1986) 1546-1551
3. S. Nishino, K. Matsumoto, T. Yoshida, Y. Chen and S. K. Lilov, Materials Science & Engineering, B61-62, 121 (1999).