Fabrication of nanostructured silicon by metal-assisted etching and its effects on matrix-free laser desorption/ionization mass spectrometry

Analytica Chimica Acta

Volumn 687, Issue 2, 2011, Pages 97-104

  Chen, W Y ^a   Huang, J T ^a   Cheng, Y C ^a,b   Chien, C ^a,b,c   Tsao, C W ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b CATHAY GENERAL HOSPITAL   (Taiwan)

^c FU JEN CATHOLIC UNIVERSITY   (Taiwan)

Author keywords

Desorption ionization on silicon; Mass spectrometry; Matrix free laser desorption ionization; Metal assisted etching; Nanostructured silicon

Indexed keywords

ABSORPTION EFFICIENCY; DESORPTION/IONIZATION ON SILICONS; ETCHING TIME; HIGH RESISTANCE; HIGH SENSITIVITY; HIGHLY-CORRELATED; ION INTENSITIES; KEY PROCESS; LASER DESORPTION/IONIZATION MASS SPECTROMETRIES; LOW RESISTANCE; MATRIX; NANOSTRUCTURED SILICON; PORE DEPTH; SILICON SUBSTRATES; SUBSTRATE RESISTANCE;

ATOMIC FORCE MICROSCOPY; DESORPTION; FLUORESCENCE MICROSCOPY; MASS SPECTROMETRY; METALS; SUBSTRATES; SURFACE PROPERTIES; SURFACE ROUGHNESS;

ETCHING;

SILICON;

ABSORPTION; ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMICAL ANALYSIS; CHEMICAL COMPOSITION; CHEMICAL PROCEDURES; CHEMICAL STRUCTURE; CONTROLLED STUDY; ETCHING; FLUORESCENCE MICROSCOPY; HYDROPHOBICITY; MATRIX ASSISTED LASER DESORPTION IONIZATION TIME OF FLIGHT MASS SPECTROMETRY; NANOFABRICATION; PARTICLE SIZE; POROSITY; PRIORITY JOURNAL;

MASS SPECTROMETRY; METALS; MICROSCOPY, ATOMIC FORCE; MICROSCOPY, ELECTRON, SCANNING; NANOSTRUCTURES; NANOTECHNOLOGY; SILICON; SPECTROMETRY, MASS, MATRIX-ASSISTED LASER DESORPTION-IONIZATION; SPECTROPHOTOMETRY;

EID: 79151484935     PISSN: 00032670     EISSN: 18734324     Source Type: Journal    
DOI: 10.1016/j.aca.2010.11.041     Document Type: Article

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